LATTICE SITES OF ION IMPLANTED Cu ATOMS IN DIAMOND
نویسندگان
چکیده
Radioactive Cu atoms were accelerated to 60 keV at the online isotope separator ISOLDE at CERN, and implanted into a type IIa natural diamond sample to a dose of 2 x 10 cm. The channeling of β particles and conversion electrons emitted in the decay of Cu and Zn*, respectively, were monitored about the three major axial directions with a two dimensional position-sensitive detector. The electron emission channeling data were collected from the room temperature implanted sample and after annealing at 1200 K. The observed channelling patterns were fitted with simulations based on the many beam formalism of electron motion through a crystal lattice. In the as-implanted sample, 25% of the Cu atoms were located a mean, isotropic displacement of 0.25(5) Å from substitutional sites, and the remainder, fR = 75%, at sites that gave an isotropic emission yield. Annealing at 1200 K results in enhanced axial and planar channeling effects. The fits to the data yield either a fraction f1= 43(5)% of Cu atoms located 0.22(4) Å from substitutional sites and fR = 57%, or a fraction f1= 10(2)% at substitutional sites, a fraction f2= 50(5) % at mean isotropic displacement of 0.5 Å from substitutional sites, and a ‘random’ fraction fR = 40%.
منابع مشابه
Coordination and Siting of Cu+ Ion Adsorbed into Silicalite-2 Porous Structure: A Density Functional Theory Study
Coordination of Cu+ ions adsorbed on plausible sites of a silicalite-2 lattice has been investigated computationally via hybrid density functional theory method at the B3LYP/6-311+G* and B3LYP/Def2-TZVP levels of theory using molecular models of the active site. The symmetrical coordination of Cu+ ions to almost five oxygen atoms of the all-silica framework in six-membered ring (6MR) sites of t...
متن کاملLattice location and stability of implanted Cu in ZnO
The lattice location of copper in single-crystalline zinc oxide was studied by means of the emission channeling technique. Following 60-keV room-temperature implantation at a fluence of 2.3310 cm, the angular distribution of b particles emitted by the radioactive isotope Cu was measured by a position-sensitive detector. The b emission patterns give direct evidence that in the as-implanted state...
متن کاملLattice location of implanted Cu in highly doped Si
We report on the lattice location of ion-implanted Cu in pand n-Si using the emission channeling technique. Following room-temperature implantation, the majority of Cu was found on near-substitutional sites in both pand n-Si. Annealing in the temperature range 200-600°C resulted in changes of near-substitutional Cu to random sites in p-Si, while in n-Si all of the near-substitutional Cu was con...
متن کاملLattice location and stability of ion implanted Cu in Si
We report on the lattice location of ion implanted Cu in Si using the emission channeling technique. The angular distribution of beta(-) particles emitted by the radioactive isotope 67Cu was monitored following room temperature implantation into Si single crystals and annealing up to 600 degrees C. The majority of Cu was found close to substitutional sites, however, with a significant displacem...
متن کاملSynthesis and characterization of mono- and heterodinuclear complexes of dinucleating macrocyclic ligand bearing hexa- and pentadentate coordination sites
Macrocyclic heterobinuclear Zn(II)–Cu(II) complexes with phenol based dicompartmental ligands possessing contiguous hexa- and penta-coordination sites were prepared by a stepwise procedure. The ligands include similar N4O2 and dissimilar N(imine)3O2 and N(amine)3O2 coordination sites sharing two phenolic oxygen atoms. The six-coordination site comprises two pyridyl pendant arms on the amine nit...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2003